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Tutorials (November 3, Mon., 2014)

[Tutorial 1-1] Design Technologies for Application Processor
Youngmin Shin,
Master, Samsung Electronics Co., Ltd.

Youngmin Shin is a Samsung Master of the Semiconductor Business, Samsung Electronics Co., Ltd.
He is a heading of Advanced Design & Technology Group in SoC Processor development team. His role in Samsung is to develop next generation ARM CPU using new process and work for technology leadership. After received BS degree from Yonsei University, Seoul, Korea in 1988, he has worked for Samsung only around 24 years. He worked for 0.35~0.13um Alpha CPU joint-project with DEC(1996~2001). He has developed high performance ARM CPUs after 2002 not only for mobile CPU but also ARM CPU for consumer SoC from 130nm to 14nm.

Application Processor SoC market is growing very fast in volume and becoming more intelligent and powerful. From 2012, volume of Smartphone is higher than that of PC. In order to get more competitiveness, high performance and low power IPs must be needed in this Application Processor SoC. In this lecture, he will present how CPU and GPU in Application Processor has been developed for this purpose and what kind of design techniques are used for Application Processor. He also present industry trend of mobile CPU development.

[Tutorial 1-2] Current and future trends of the specialized non-mobile CMOS Image Sensor
Juil Lee,
Dongbu HiTek, Co., Ltd.

Bachelor of Science in Metallurgical Engineering at Yonsei University (1984~1988)
Master of Science in Metallurgical Engineering at Yonsei University (1988~1990)
Hyundai Electronics Industry (1992~1999)
  - 0.5um~0.35um CIS Tech. Development (8.0um~5.6um Pixel)
Hynix (1999~2003)
  - 0.18um CIS Tech. Development (5.0um~3.2um Pixel)
Magnachip (2003~2008)
  - 0.13um~0.11um CIS Tech. Development (2.8um~1.75um Pixel)
Dongbu HiTek (2008~Present)
  - 0.13um~0.11um CIS Tech. Development (2.2um~1.4um Pixel)
  - Under 90nm CIS Tech. Development (1.1um Pixel)

The sensor is an easy device to artificially reproduce, or even transcend a person's senses. Humans have five senses - sight, hearing, touch, smell, and taste. Among them, sensors related to sight and hearing can be easily reproduced using semiconductor material, but sensors related with touch, smell, and taste are relatively difficult to reproduce. In this lecture, I will introduce the CMOS Image Sensor, with a focus on the types and characteristics of the specialized non-mobile CMOS Image Sensor. This type of sensor is generally used for automotive sensors, security sensors, ambient light/proximity sensors, 3D TOF sensors, line/linear sensors, touch screen sensors, rain sensors, optical mouse sensors, fingerprint sensors, smoke sensors, encoder sensors, and machine vision sensors. I will explain the various technological developments of the specialized non-mobile CMOS Image Sensor, and will conclude with a forecast of future trends. A shift has occurred these days from a conventional mobile CMOS Image Sensor to a more specialized non-mobile CMOS Image Sensor. The key words of the shift are convergence, global leading technology, differentiation, value adding and many products with small volume.

[Tutorial 2-1] Device Noise-Aware Analog Design and Ultra-Low Power Analog Circuit Design in an Ubiquitous World
Jaejin Park,
Master, Samsung Electronics Co., Ltd.

Jaejin Park received the Ph. D degree at Carnegie Mellon University, USA. He is a Samsung Master (technical vice president) in System LSI division, Samsung Electronics Co., Ltd. His interests are the design of data converters (ADC/DAC), clock generators (PLL/DLL), and high-speed interfaces. His recent works include analog device engineering, analog/mixed signal design methodology, and ultra-low power circuits. He has coauthored internal and external publications and hold patents in the analog design group.

he first part of this talk covers fundamentals of thermal, Flicker, and RTS (Random Telegraph Signal) noises and the analog device noise analysis based on input referred noise. The device noise-aware analog design and methodology are also presented with an example. The second part shows requirements and challenges of ultra-low power dissipation in an ubiquitous world and approaches to address facing problems are presented with analog techniques of several sensor conditioning circuits and energy harvesting.

[Tutorial 2-2] Electrostatic Discharge (ESD) Protection of Automotive Electronics in High-Voltage Si BiCMOS/BCD Technologies
Juin J. Liou,
University of Central Florida, USA

Juin J. Liou received the B.S. (honors), M.S., and Ph.D. degrees in electrical engineering from the University of Florida, Gainesville, in 1982, 1983, and 1987, respectively. In 1987, he joined the Department of Electrical and Computer Engineering at the University of Central Florida (UCF), Orlando, Florida where he is now the UCF Pegasus Distinguished Professor and Lockheed Martin St. Laurent Professor of Engineering. His current research interests are Micro/nanoelectronics computer-aided design, RF device modeling and simulation, and electrostatic discharge (ESD) protection design and simulation. Dr. Liou has served as the IEEE EDS Vice-President of Regions/Chapters, IEEE EDS Treasurer, IEEE EDS Finance Committee Chair, Member of IEEE EDS Board of Governors and Member of IEEE EDS Educational Activities Committee.

Electrostatic discharge (ESD) is one of the most prevalent threats to electronic components. It is an event in which a finite amount of charge is transferred from one object (i.e., human body) the other (i.e., microchip). This process can result in a very high current passing through the microchip within a very short period of time, and more than 35% of chip damages can be attributed to such an event. As such, designing on-chip ESD structures to protect integrated circuits against ESD stresses is a high priority in the semiconductor industry. The continuing advancement of MOS technology makes the ESD-induced failures even more prominent, and one can predict with certainty that the availability of effective and robust ESD protection solutions will become a critical and essential component to the successful commercialization of the modern and future MOS-based electronics. An overview on the ESD sources, models, protection schemes, and testing will first be given in this tutorial. This is followed by presenting the approaches and challenges of designing and realizing ESD protection solutions for automotive electronics integrated circuits fabricated in the high-voltage BiCMOS/Bipolar-CMOS-DMOS (BCD) technologies.

1. Overview of ESD (i.e., ESD standards, ESD protection schemes, ESD testing)
2. Background and challenges of designing ESD protection solutions for high-voltage integrated circuits (i.e., automotive integrated circuits)
3. Development of effective ESD protection solutions for automotive electronics in high-voltage Si BiCMOS/BCD technologies

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