Tuesday, August 20, 2024
[WiCAS Speeches] 12:00~12:40
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Ferroelectric devices for non-volatile memory and in-memory computing circuitProf. Xiuyan Li
Biography
Xiuyan Li is an Associate Professor in the department of Nano/Micro electronics, Shanghai Jiao Tong University. She got her Ph.D degree in Material Engineering from The University of Tokyo, Japan, in 2015. After that, she was a post-doctoral at Rutgers University, USA. Then, she joined Shanghai Jiao Tong University from 2018. Her research interests include device physics and materials engineering for advanced CMOS and memory technologies. So far, she published more than 40 papers in journals like Nature Communications, IEEE Electron Device Letters and Applied Physics Letters, as well as in conferences like IEDM and SSDM.
Abstract
HfO2-based ferroelectrics are intensively investigated for application in non-volatile memory and in-memory computing technologies, recently. The high performance of circuit requires well controlling of material properties and devices performance of ferroelectrics. In this presentation, we demonstrate our recent studies on the controlling of endurance and switching speed of HfO2-based ferroelectric capacitor, controlling of memory window and endurance of HfO2-based FeFET, and application of HfO2-based ferroelectric memcapacitor in reservoir computing. |